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| Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. October 1997 Features * 4.0A and 5.0A, 150V and 200V * rDS(ON) = 0.8 and 1.2 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRF220 IRF221 IRF222 IRF223 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF220 IRF221 IRF222 IRF223 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 199& File Number 1567.2 1 IRF220, IRF221, IRF222, IRF223 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF220 200 200 5.0 3.0 20 20 40 0.32 85 -55 to 150 300 260 IRF221 150 150 5.0 3.0 20 20 40 0.32 85 -55 to 150 300 260 IRF222 200 200 4.0 2.5 16 20 40 0.32 85 -55 to 150 300 260 IRF223 150 150 4.0 2.5 16 20 40 0.32 85 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V, (Figure 10) 200 150 VGS(TH) IDSS VDS = VGS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF220, IRF222 IRF221, IRF223 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRF220, IRF221 IRF222, IRF223 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF220, IRF221 IRF222, IRF223 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 5.0 4.0 100 A A nA IGSS rDS(ON) VGS = 20V ID = 2.5A, VGS = 10V, (Figure 8) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A VDD = 0.5 x Rated BVDSS, ID 2.5A, RG = 50 For IRF220, 222 RL = 80 For IRF221, 223 RL = 60 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 1.3 - 0.5 0.8 2.5 20 30 50 30 11 0.8 1.2 40 60 100 60 15 S ns ns ns ns nC - 5.0 6.0 - nC nC 2 IRF220, IRF221, IRF222, IRF223 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN - TYP 450 150 40 5.0 MAX UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 3.12 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current IRF220, IRF221 IRF222, IRF223 Pulse Source to Drain Current (Note 3) IRF220, IRF221 S SYMBOL ISD TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier G D MIN TYP MAX UNITS - - 5.0 4.0 A A ISDM VSD TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13) trr QRR TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/s TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/s - - 20 16 A A IRF222, IRF223 Source to Drain Diode Voltage (Note 2) IRF220, IRF221 IRF222, IRF223 Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 350 2.3 2.0 1.8 - V V ns C 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50, peak IAS = 5A. See Figures 15, 16. 3 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 5 4 IRF220, IRF221 IRF222, IRF223 0.8 0.6 0.4 0.2 0 3 2 1 0 50 100 150 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t1 t2 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 10 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) IRF220, IRF221 10 10V VGS = 7V 8 80s PULSE TEST VGS = 6V 6 ID, DRAIN CURRENT (A) 10 IRF222, IRF223 IRF220, IRF221 IRF222, IRF223 100s 10s DC TC = 25oC TJ = MAX RATED 4 VGS = 5V 2 VGS = 4V 0 1.0 1ms 10ms 100ms IRF220 IRF222 1000 0.1 SINGLE PULSE 1.0 IRF221 IRF223 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 4 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified 5 10V 8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4 6V VGS = 5V 8 80s PULSE TEST (Continued) 10 80s PULSE TEST VDS >ID(ON) x rDS(ON) MAX 3 6 2 4 TJ = 125oC TJ = 25oC TJ = -55oC 1 4V 2 0 0 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 10 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 1.5 NORMALIZED DRAIN TO SOURCE 2.2 VGS = 10V ID = 2A rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 1.8 ON RESISTANCE 1.0 VGS = 10V 1.4 VGS = 20V 0.5 1.0 0.6 0 0 5 10 ID, DRAIN CURRENT (A) 15 20 0.2 -40 0 40 80 TJ, JUNCTION TEMPERATURE (oC) 120 NOTE: Heating effect of 2s is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.15 C, CAPACITANCE (pF) 800 1.05 600 0.95 400 CISS COSS 0.85 200 CRSS 0.75 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified 5 gfs, TRANSCONDUCTANCE (S) 80s PULSE TEST 4 TJ = -55oC ISD, SOURCE TO DRAIN CURRENT (A) VDS > ID(ON) x rDS(ON)MAX (Continued) 2 100 TJ = 25oC TJ = 150oC 10 TJ = 150oC TJ = 25oC 1.0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 0 1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V) 4 3 TJ = 25oC TJ = 125oC 2 1 0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6.0A 15 VDS = 40V VDS = 100V 10 VDS = 160V IRF220, IRF222 5 0 0 4 8 12 16 Qg(TOT), TOTAL GATE CHARGE (nC) 20 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6 IRF220, IRF221, IRF222, IRF223 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED INDUCTIVE WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VGS 12V BATTERY 0.2F 50k 0.3F VDS DUT 0 G Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 7 |
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